Essential and Operational Technologies

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Units	Per unit	Per Tube**
50 - 50	€1.554	€77.70
100 - 200	€1.321	€66.05
250 +	€1.166	€58.30

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	40 A
	Maximum Drain Source Voltage	100 V
	Package Type	TO-220AB
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	200 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+175 °C
	Typical Gate Charge @ Vgs	180 nC @ 10 V
	Length	10.54mm
	Number of Elements per Chip	1
	Width	4.69mm
	Transistor Material	Si
	Height	8.77mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 40 A
	Maximum Drain Source Voltage 100 V
	Package Type TO-220AB
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 200 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +175 °C
	Typical Gate Charge @ Vgs 180 nC @ 10 V
	Length 10.54mm
	Number of Elements per Chip 1
	Width 4.69mm
	Transistor Material Si
	Height 8.77mm
	Minimum Operating Temperature -55 °C

Infineon HEXFET P-Channel MOSFET, 40 A, 100 V, 3-Pin TO-220AB IRF5210PBF

P-Channel Power MOSFET 100V to 150V, Infineon

Infineon HEXFET Series MOSFET, 40A Maximum Continuous Drain Current, 200W Maximum Power Dissipation - IRF5210PBF

Features & Benefits

Applications

What is the maximum operating temperature for this component?

How does the low on-resistance benefit circuit performance?

Is this suitable for applications in automotive systems?

What kind of circuit configurations can it be integrated into?

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