Infineon HEXFET N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB

RS Stock No.:: 919-4895
Mfr. Part No.:: IRLZ24NPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 18 A, 55 V Enhancement, 3-Pin TO-220AB

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.

RS Stock No.:: 919-4895
Mfr. Part No.:: IRLZ24NPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Series	HEXFET
	Channel Type	N
	Product Type	MOSFET
	Maximum Continuous Drain Current (Id)	18 A
	Maximum Drain Source Voltage (Vds)	55 V
	Channel Mode	Enhancement
	Pin Count	3
	Package Type	TO-220AB
	Automotive Standard	No
	Forward Voltage (Vf)	1.3 V
	Height	8.77 mm
	Length	10.54 mm
	Maximum Drain Source Resistance (Rds)	60 mΩ
	Maximum Gate Source Voltage (Vgs)	-16 V, +16 V
	Maximum Operating Temperature	175 °C
	Maximum Power Dissipation (Pd)	45 W
	Minimum Operating Temperature	-55 °C
	Mount Type	Through Hole
	Standards/Approvals	JEDEC TO-220AB, ANSI Y14.5M, 1982
	Typical Gate Charge (Qg) @ Vgs	15 nC
	Width	4.69 mm

	Select all
	Brand Infineon
	Series HEXFET
	Channel Type N
	Product Type MOSFET
	Maximum Continuous Drain Current (Id) 18 A
	Maximum Drain Source Voltage (Vds) 55 V
	Channel Mode Enhancement
	Pin Count 3
	Package Type TO-220AB
	Automotive Standard No
	Forward Voltage (Vf) 1.3 V
	Height 8.77 mm
	Length 10.54 mm
	Maximum Drain Source Resistance (Rds) 60 mΩ
	Maximum Gate Source Voltage (Vgs) -16 V, +16 V
	Maximum Operating Temperature 175 °C
	Maximum Power Dissipation (Pd) 45 W
	Minimum Operating Temperature -55 °C
	Mount Type Through Hole
	Standards/Approvals JEDEC TO-220AB, ANSI Y14.5M, 1982
	Typical Gate Charge (Qg) @ Vgs 15 nC
	Width 4.69 mm

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 45W Maximum Power Dissipation - IRLZ24NPBF

This MOSFET is an essential component for various power applications, known for its efficient performance and robust specifications. Infineon's HEXFET technology ensures precision in electronic designs, making it a popular option in automation and mechanical industries. It effectively controls current flow in devices, significantly impacting modern electrical systems.

Features & Benefits

• Supports a maximum continuous drain current of 18A for high performance

• Operates under a maximum drain-source voltage of 55V for versatile applications

• Low gate threshold voltage minimises energy loss during operation

• Exhibits low drain-source resistance for enhanced efficiency

• Features enhancement mode capability for precise switching

• Can withstand temperatures up to +175°C for functionality under harsh conditions

Applications

• Utilised for power management in industrial automation systems

• Integrated into switching power supplies for optimal performance

• Employed in motor drive circuits for improved control

• Incorporated in various consumer electronics for dependable performance

What are the recommended gate-source voltages for proper operation?

The device can handle a maximum gate-source voltage of -16V to +16V, ensuring stable performance.

Can this component be used in high-temperature environments?

Yes, it operates effectively in temperatures ranging from -55°C to +175°C, suitable for diverse applications.

How does the low Rds(on) impact energy consumption?

A low drain-source resistance minimises power loss, enhancing overall efficiency and reducing heat generation during operation.

What considerations should be made during installation?

Proper attention should be given to the mounting type to ensure secure installation and adequate cooling to prevent overheating.

Is this component compatible with standard TO-220AB packages?

Yes, its design conforms to the TO-220AB standard, facilitating easy integration into existing systems.