Taiwan Semiconductor Single 1 N-Channel MOSFET, 2.8 A, 20 V Enhancement, 3-Pin SOT-23 TSM2302CX RFG
- RS Stock No.:
- 398-423
- Mfr. Part No.:
- TSM2302CX RFG
- Manufacturer:
- Taiwan Semiconductor
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 50 units)*
€7.80
(exc. VAT)
€9.60
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | €0.156 | €7.80 |
| 250 - 450 | €0.131 | €6.55 |
| 500 - 950 | €0.123 | €6.15 |
| 1000 - 2450 | €0.116 | €5.80 |
| 2500 + | €0.11 | €5.50 |
*price indicative
- RS Stock No.:
- 398-423
- Mfr. Part No.:
- TSM2302CX RFG
- Manufacturer:
- Taiwan Semiconductor
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Taiwan Semiconductor | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 2.8 A | |
| Maximum Drain Source Voltage (Vds) | 20 V | |
| Channel Mode | Enhancement | |
| Pin Count | 3 | |
| Package Type | SOT-23 | |
| Height | 950 μm | |
| Length | 3.05 mm | |
| Maximum Drain Source Resistance (Rds) | 65 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 8 V, -8 V | |
| Maximum Operating Temperature | 150 °C | |
| Maximum Power Dissipation (Pd) | 900 mW | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Width | 1.4 mm | |
| Select all | ||
|---|---|---|
Brand Taiwan Semiconductor | ||
Transistor Configuration Single | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 2.8 A | ||
Maximum Drain Source Voltage (Vds) 20 V | ||
Channel Mode Enhancement | ||
Pin Count 3 | ||
Package Type SOT-23 | ||
Height 950 μm | ||
Length 3.05 mm | ||
Maximum Drain Source Resistance (Rds) 65 mΩ | ||
Maximum Gate Source Voltage (Vgs) 8 V, -8 V | ||
Maximum Operating Temperature 150 °C | ||
Maximum Power Dissipation (Pd) 900 mW | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Width 1.4 mm | ||
N-Channel Power MOSFET, Taiwan Semiconductor
MOSFET Transistors, Taiwan Semiconductor
Related links
- Taiwan Semiconductor Single 1 N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 TSM2302CX RFG
- Taiwan Semiconductor Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 TSM2307CX RFG
- Taiwan Semiconductor Adjustable Shunt Voltage Reference 0.5 % 3-Pin SOT-23, TS431BCX RFG
- Toshiba Single 1 N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23 SSM3K361R
- Toshiba Single 1 N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 SSM3K335R
- Toshiba Single 1 N-Channel MOSFET 100 V EnhancementLF(B
- Taiwan Semi N-Channel MOSFET 20 V, 3-Pin SOT-23 TSM2310CX RFG
- DiodesZetex DMG2302UK N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 DMG2302UK-7