Starpower DOSEMI Single Switch-Channel SiC Mosfet without Diode, 37 A, 1.2 kV Enhancement, 4-Pin Tape & Reel
- RS Stock No.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
€7.17
(exc. VAT)
€8.82
(inc. VAT)
In Stock
- 31 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | €7.17 |
| 10 - 99 | €6.46 |
| 100 - 499 | €5.94 |
| 500 - 999 | €5.52 |
| 1000 + | €4.49 |
*price indicative
- RS Stock No.:
- 427-759
- Mfr. Part No.:
- DM800S12TDRB
- Manufacturer:
- Starpower
Specifications
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Starpower | |
| Product Type | SiC Mosfet without Diode | |
| Channel Type | Single Switch | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | DOSEMI | |
| Package Type | Tape & Reel | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 105mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 4.1V | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Maximum Power Dissipation Pd | 162W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Starpower | ||
Product Type SiC Mosfet without Diode | ||
Channel Type Single Switch | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series DOSEMI | ||
Package Type Tape & Reel | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 105mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 4.1V | ||
Maximum Gate Source Voltage Vgs 22V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Maximum Power Dissipation Pd 162W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Starpower MOSFET Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as hybrid and electric vehicle.
SiC power MOSFET
Low RDS(on)
Low inductance case avoid oscillations
ROHS
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