onsemi Dual N NTTF 1 Type N-Channel MOSFET, 38 A, 60 V Enhancement, 12-Pin WQFN NTTFD9D0N06HLTWG
- RS Stock No.:
- 202-5721
- Mfr. Part No.:
- NTTFD9D0N06HLTWG
- Manufacturer:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
€34.00
(exc. VAT)
€41.75
(inc. VAT)
Temporarily out of stock
- Shipping from 30 November 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | €1.36 | €34.00 |
| 100 - 225 | €1.172 | €29.30 |
| 250 + | €1.016 | €25.40 |
*price indicative
- RS Stock No.:
- 202-5721
- Mfr. Part No.:
- NTTFD9D0N06HLTWG
- Manufacturer:
- onsemi
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 38A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTTF | |
| Package Type | WQFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 9Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.79V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 26W | |
| Typical Gate Charge Qg @ Vgs | 13.5nC | |
| Transistor Configuration | Dual N | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.3mm | |
| Height | 0.75mm | |
| Standards/Approvals | RoHS | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 38A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTTF | ||
Package Type WQFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 9Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.79V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 26W | ||
Typical Gate Charge Qg @ Vgs 13.5nC | ||
Transistor Configuration Dual N | ||
Maximum Operating Temperature 150°C | ||
Length 3.3mm | ||
Height 0.75mm | ||
Standards/Approvals RoHS | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
The ON Semiconductor Symmetrical Dual N-Channel MOSFET includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. It is used in Computing, Communications, General purpose point of load applications.
Low inductance packaging
Lower switching losses
RoHS compliant
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