Infineon CoolMOS CE Type N-Channel MOSFET, 3.9 A, 800 V Enhancement, 3-Pin TO-252 IPD80R1K4CEATMA1

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Subtotal (1 pack of 15 units)*

€11.475

(exc. VAT)

€14.115

(inc. VAT)

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15 +€0.765€11.48

*price indicative

Packaging Options:
RS Stock No.:
214-4396
Mfr. Part No.:
IPD80R1K4CEATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.9A

Maximum Drain Source Voltage Vds

800V

Series

CoolMOS CE

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23nC

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

63W

Maximum Operating Temperature

150°C

Length

6.65mm

Standards/Approvals

No

Width

6.42 mm

Height

2.35mm

Automotive Standard

No

This Infineon 800V Cool MOS CE MOSFET has high voltage capability that combines safety with performance and ruggedness to allow stable designs at highest efficiency level.

It is RoHS compliant

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