Infineon CoolMOS Type N-Channel MOSFET, 13 A, 650 V Enhancement, 4-Pin VSON IPL60R185C7AUMA1

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Subtotal (1 pack of 5 units)*

€15.14

(exc. VAT)

€18.62

(inc. VAT)

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Per Pack*
5 - 20€3.028€15.14
25 - 45€2.636€13.18
50 - 120€2.452€12.26
125 - 245€2.302€11.51
250 +€2.12€10.60

*price indicative

Packaging Options:
RS Stock No.:
222-4683
Mfr. Part No.:
IPL60R185C7AUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Series

CoolMOS

Package Type

VSON

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

185mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

77W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

24nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

8.1mm

Height

1.1mm

Width

8.1 mm

Automotive Standard

No

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Green Product (RoHS compliant)

MSL1 up to 260°C peak reflow AEC Q101 qualified

OptiMOS™ - power MOSFET for automotive applications

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