Name: Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3
Brand: Vishay
SKU: 268-8333
Price: 2.02 EUR
Availability: OutOfStock

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	33.8A
	Maximum Drain Source Voltage Vds	150V
	Series	SiR
	Package Type	PowerPAK SO-8
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.023Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	65.7W
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Length	5.15mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 33.8A
	Maximum Drain Source Voltage Vds 150V
	Series SiR
	Package Type PowerPAK SO-8
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.023Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 65.7W
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Length 5.15mm
	Automotive Standard No

Datasheet - SIR5708DP-T1-RE3

COO (Country of Origin):: CN

The Vishay N channel TrenchFET generation 5 power MOSFET is lead Pb and halogen free device. It is used in applications such as synchronous rectification, motor drive control, power supplies.

Very low figure of merit

ROHS compliant

UIS tested 100 percent

Vishay SiR Type N-Channel MOSFET, 33.8 A, 150 V Enhancement, 8-Pin PowerPAK SO-8 SIR5708DP-T1-RE3

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