ROHM BM3G005MUV-LBE2 High Side, High Side Power Switch IC 46-Pin, VQFN046V8080
- RS Stock No.:
- 646-596
- Mfr. Part No.:
- BM3G005MUV-LBE2
- Manufacturer:
- ROHM
Bulk discount available
Subtotal (1 tape of 2 units)*
€25.73
(exc. VAT)
€31.648
(inc. VAT)
In Stock
- Plus 1,000 unit(s) shipping from 27 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 8 | €12.865 | €25.73 |
| 10 + | €12.485 | €24.97 |
*price indicative
- RS Stock No.:
- 646-596
- Mfr. Part No.:
- BM3G005MUV-LBE2
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Power Switch Topology | High Side | |
| Product Type | Power Switch IC | |
| Power Switch Type | High Side | |
| Switch On Resistance RdsOn | 50mΩ | |
| Package Type | VQFN046V8080 | |
| Minimum Supply Voltage | 6.83V | |
| Pin Count | 46 | |
| Maximum Supply Voltage | 650V | |
| Maximum Operating Temperature | 105°C | |
| Minimum Operating Temperature | -40°C | |
| Operating Current | 2.2mA | |
| Length | 8mm | |
| Standards/Approvals | No | |
| Height | 1.0mm | |
| Automotive Standard | No | |
| Series | BM3G005MUV-LB | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Power Switch Topology High Side | ||
Product Type Power Switch IC | ||
Power Switch Type High Side | ||
Switch On Resistance RdsOn 50mΩ | ||
Package Type VQFN046V8080 | ||
Minimum Supply Voltage 6.83V | ||
Pin Count 46 | ||
Maximum Supply Voltage 650V | ||
Maximum Operating Temperature 105°C | ||
Minimum Operating Temperature -40°C | ||
Operating Current 2.2mA | ||
Length 8mm | ||
Standards/Approvals No | ||
Height 1.0mm | ||
Automotive Standard No | ||
Series BM3G005MUV-LB | ||
The ROHM GaN HEMT Power Stage is a high-performance product designed for the industrial equipment market, providing an optimal solution for electronics systems that require high power density and efficiency. By integrating the 650V enhancement GaN HEMT and silicon driver into ROHM’s original package, the product significantly reduces parasitic inductance caused by PCB and wire bonding, compared to traditional discrete solutions. This innovation enables a high switching slew rate of up to 150V/ns, making it the ideal choice for applications demanding fast switching and superior efficiency.
Low VDD Quiescent and Operating Current
Low Propagation Delay
High dv/dt Immunity
Adjustable Gate Drive Strength
Power Good Signal Output
VDD UVLO Protection
Thermal Shutdown Protection