Infineon HEXFET Type N-Channel MOSFET, 61 A, 55 V TO-252 IRLR3915TRPBF

Bulk discount available

Subtotal (1 pack of 2 units)*

€3.17

(exc. VAT)

€3.90

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 1,472 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
2 - 18€1.585€3.17
20 - 48€1.445€2.89
50 - 98€1.345€2.69
100 - 198€1.25€2.50
200 +€1.16€2.32

*price indicative

Packaging Options:
RS Stock No.:
258-3999
Distrelec Article No.:
304-40-553
Mfr. Part No.:
IRLR3915TRPBF
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

61A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Maximum Drain Source Resistance Rds

17mΩ

Maximum Gate Source Voltage Vgs

16 V

Maximum Power Dissipation Pd

120W

Typical Gate Charge Qg @ Vgs

61nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon HEXFET power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Advanced Process Technology

Ultra Low On-Resistance

Fast Switching

Related links

Recently viewed