Infineon HEXFET Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC IRF8313TRPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

9.7 A

Maximum Drain Source Voltage

30 V

Series

HEXFET

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

21.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

2

Transistor Material

Si

Typical Gate Charge @ Vgs

6 nC @ 4.5 V

Length

5mm

Width

4mm

Minimum Operating Temperature

-55 °C

Height

1.5mm